Study of HTO-based alternative gate oxides for high voltage transistors on advanced eNVM technology

Targeting the integration of embedded non-volatile memories on thin-silicon body technology, high temperature oxide (HTO) is evaluated on a 40nm automotive eFlash process as replacement of furnace grown thick gate oxide for high voltage transistors. Different thermal treatments are evaluated to enha...

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Bibliographic Details
Published in2017 IEEE International Integrated Reliability Workshop (IIRW) pp. 1 - 4
Main Authors Morillon, Dann, Pribat, Clement, Julien, Franck, Cherault, Nathalie, Goy, Jerome, Gourhant, Olivier, Ogier, Jean-Luc, Masson, Pascal, Ghezzi, Giada, Kempf, Thibault, Delalleau, Julien, Villaret, Alexandre, Grenier, Jean-Christophe, Niel, Stephan
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2017
Subjects
Annealing
embedded non-volatile memory
Furnaces
gate oxide
high voltage transistor
HTO
Logic gates
MOS devices
Reliability
Stress
TDDB
thermal treatment
Transistors
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Summary:Targeting the integration of embedded non-volatile memories on thin-silicon body technology, high temperature oxide (HTO) is evaluated on a 40nm automotive eFlash process as replacement of furnace grown thick gate oxide for high voltage transistors. Different thermal treatments are evaluated to enhance HTO quality, including growth of interfacial layer, reoxidation and high temperature annealings. Transistor performance and reliability are thoroughly studied, showing that the main challenge for HTO integration is time-dependent dielectric breakdown. Because of higher charge trapping, HTO is found to be less reliable than grown oxide. However, optimized dedicated treatments successfully improve HTO quality and reliability.
ISSN:2374-8036
DOI:10.1109/IIRW.2017.8361239