Body bias effect of GaN schottky barrier MOSFET with ITO source/drain

We fabricated GaN SB-MOSFET using the ITO source/drain and gate with very high drain current and low threshold voltage. Furthermore, we tried to check the body bias effect of the GaN SB-MOSFET after forming the ohmic contact to the substrate. We could control threshold voltage by body bias that make...

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Bibliographic Details
Published in2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) pp. 1 - 4
Main Authors Chang-Ju Lee, Tae-Hyeon Kim, Dong-Seok Kim, Sang-Yun Sung, Byung-Kwon Jung, Young-Woo Heo, Jung-Hee Lee, Sung-Ho Hahm
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2010
Subjects
Board of Directors
Body bias
Gallium nitride (GaN)
Indium-tin-oxide (ITO)
Logic gates
MOSFET
Radio frequency
Schottky barrier (SB)
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Summary:We fabricated GaN SB-MOSFET using the ITO source/drain and gate with very high drain current and low threshold voltage. Furthermore, we tried to check the body bias effect of the GaN SB-MOSFET after forming the ohmic contact to the substrate. We could control threshold voltage by body bias that makes the device more useful. It is applicable to many of electric circuit applications such as logic gate, memory cell transistors, and image sensors, which are potential area for digital GaN UV optoelectronics.
ISBN:9781424499977
1424499976
DOI:10.1109/EDSSC.2010.5713729