Loss/resistance evaluation of SiC-MOSFET and Si-IGBT in a novel type of single-ended wireless V2H

• Published in: 2017 IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (WoW) pp. 1 - 6
• Main Authors: Murakami, Aoi, Omori, Hideki, Ohara, Shinya, Fukuda, Kenji, Michikoshi, Hisato, Kimura, Noriyuki, Morizane, Toshimitsu, Nakaoka, Mutsuo
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2017
• Subjects: bidirectional WPT; Coils; EV2H and H2EV; Hafnium; power loss analysis; RC-IGBT or new SiC-MOSFET; Rectifiers; Resonant inverters; single-ended HF inverter; Switches; Wireless communication; wireless power transfer
• DOI: 10.1109/WoW.2017.7959400

This paper deals with attractive voltage-source single-ended sub-resonant HF inverter as a simple wireless power transfer (WPT) based on unidirectional IPT in addition to Dual Active HF inverter and HF rectifier as transmitter and receiver of WPT is developed for bidirectional EV2H smart energy management architecture. Firstly, the voltage source single-ended sub-resonant HF inverter using a single power switch; RC-IGBT or SiC-MOSFET which regulates under the principle of PWM adaptive PFM scheme is developed for unidirectional WPT with symmetrical circular coils and its power losses analysis of RC-IGBT or SiC-MOSFET is carried out and evaluated from an experimental point of view. Secondary, the cost-effective Dual Active configuration based on voltage-source single-ended sub-resonant HF inverter-HF rectifier topology is demonstrated and discussed including working principle and operating performances from an experimental viewpoint. Thirdly, the comparative performance evaluations due to RC-IGBT or new SiC-MOSFET for bidirectional WPT using this HF inverter are illustrated from some feasible data. Finally, the practical effectiveness of bidirectional IPT based on Dual Active HF configuration principle is confirmed for EV2H/H2EV in smart energy utilizations.