A 77-79-GHz Doppler Radar Transceiver in Silicon

This paper presents the first 77 GHz single-chip direct-conversion transceiver in silicon. The transceiver, fabricated in a 0.13 mum SiGe BiCMOS technology with f T /f MAX of 170/200 GHz, consumes 740 mW, and occupies 1.3 mm x 0.9 mm. The receiver achieves 25.6 dB conversion gain, 9 dB noise figure,...

Full description

Saved in:
Bibliographic Details
Published in2007 IEEE Compound Semiconductor Integrated Circuits Symposium pp. 1 - 4
Main Authors Nicolson, S.T., Chevalier, P., Chantre, A., Sautreuil, B., Voinigescu, S.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2007
Subjects
BiCMOS integrated circuits
Doppler radar
Gain
Germanium silicon alloys
Phase noise
Power amplifiers
Silicon germanium
Transceivers
Transmitters
Voltage-controlled oscillators
Online AccessGet full text

Cover

More Information
Summary:This paper presents the first 77 GHz single-chip direct-conversion transceiver in silicon. The transceiver, fabricated in a 0.13 mum SiGe BiCMOS technology with f T /f MAX of 170/200 GHz, consumes 740 mW, and occupies 1.3 mm x 0.9 mm. The receiver achieves 25.6 dB conversion gain, 9 dB noise figure, 90 dB dynamic range, and an IP1dB of -24 dBm. The transmitter provides +5.8 dBm of saturated output power at 77 GHz, and a divide14, static frequency divider is included on-die. A tuned, 77 GHz clock distribution network is used to distribute the VCO signal to the divider, power amplifier, and down-conversion mixer. Successful detection of a Doppler shift of 55 Hz at a range of 4 m is shown. The phase noise at IF is shown to be superior to the VCO, suggesting noise correlation between the transmitter and receiver.
ISBN:1424410223
9781424410224
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS07.2007.58