Design of a Distributed Oscillator in 130 nm SOI MOS Technology

In this paper, the design and the results of a silicon-on-insulator (SOI) CMOS distributed amplifier (DA) and oscillator are presented. The four stage cascode DA (CDA) is designed with a 130 nm SOI floating body n-MOSFET in each stage requiring a chip area of 0.75 mm 2 . A gain of 7 dB and a unity-g...

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Bibliographic Details
Published in2006 European Microwave Conference pp. 1526 - 1529
Main Authors Si Moussa, M., Pavageau, C., Picheta, L., Danneville, F., Russat, J., Fel, N., Raskin, J.-P., Vanhoenacker-Janvier, D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2006
Subjects
Bandwidth
CMOS technology
Distributed amplifiers
Gain measurement
MOSFET circuits
Oscillators
Power measurement
Semiconductor device measurement
Silicon on insulator technology
Voltage
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Summary:In this paper, the design and the results of a silicon-on-insulator (SOI) CMOS distributed amplifier (DA) and oscillator are presented. The four stage cascode DA (CDA) is designed with a 130 nm SOI floating body n-MOSFET in each stage requiring a chip area of 0.75 mm 2 . A gain of 7 dB and a unity-gain bandwidth of 26 GHz are measured at 1.4 V supply voltage with a measured power consumption of 54 mW. The CDA circuit has been extended to design a cascode distributed oscillator (CDO) showing a 3 dBm carrier at 10 GHz oscillating frequency, for 2.5 V supply voltage
ISBN:2960055160
9782960055160
DOI:10.1109/EUMC.2006.281369