Modeling and Analysis of EMI and Overvoltage Phenomenon in SiC Inverter Driven Motor at High Switching Frequency

This paper explains the advantages of using Wide Bandgap (WBG) semiconductor made of Silicon Carbide (SiC) by the characterization of power efficiency and losses of SiC inverter of 15kVA/540V and the analysis of EMI and overshoot of commutation at high switching frequency. The measured power efficie...

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Bibliographic Details
Published in2018 IEEE 18th International Power Electronics and Motion Control Conference (PEMC) pp. 268 - 273
Main Authors Tran, Duc-Hoan, Segond, Gilles, Dossantos, Victor
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2018
Subjects
Common Mode (CM)
Current measurement
Electromagnetic compatibility Impact (EMI)
Electromagnetic interference
Field Oriented Control (FOC)
Inverters
motor drive
Overvoltage
Permanent Magnet Synchronous Motor (PMSM)
SiC inverter
Silicon carbide
Switches
Switching frequency
Voltage control
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Summary:This paper explains the advantages of using Wide Bandgap (WBG) semiconductor made of Silicon Carbide (SiC) by the characterization of power efficiency and losses of SiC inverter of 15kVA/540V and the analysis of EMI and overshoot of commutation at high switching frequency. The measured power efficiency of inverter can be higher 99%. This inverter also implemented in to electromechanical chain to drive an aeronautic motor (type PMSM). However, faster switching (higher di/dt and dv/dt) of SiC inverter, at higher frequencies, it is necessary to identify the electromagnetic impact (EMI) and the overshoot switching voltage. The experimental results will be shown the interesting of this technology and the impact at high switching frequency.
ISSN:2473-0165
DOI:10.1109/EPEPEMC.2018.8521882