Design XOR gate with SETMOS technology

Increasing the number of transistors on a single chip, results increased power consumption in digital circuits. There is a very urgent need to use sush components that has very low dimensions to speed up and improve the power consumption. The single-electron transistor (SET) can be a good alternativ...

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Bibliographic Details
Published in2015 International Congress on Technology, Communication and Knowledge (ICTCK) pp. 478 - 481
Main Authors Shahri, Maryam Sadat Jalali, Talebiyan, Seyyed Reza
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2015
Subjects
CMOS
CMOS technology
Inverters
Logic gates
MOSFET
Power demand
SET
Single electron transistors
XOR
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Summary:Increasing the number of transistors on a single chip, results increased power consumption in digital circuits. There is a very urgent need to use sush components that has very low dimensions to speed up and improve the power consumption. The single-electron transistor (SET) can be a good alternative For CMOS transistors. SET is a nano particle sized dimension. In this paper, regarding the application of XOR gate in computational circuits and its different implementation with CMOS logic, XOR gate is implemented by a combination of SET and CMOS transistors and its performance is compared to CMOS logic.
DOI:10.1109/ICTCK.2015.7582715