Annealing of Irradiated-Induced defects in power MOSFETs

An innovative method of device characterization is experimented to qualify annealing Gamma-ray damage in power MOSFETs. The degradation of structural parameters of the body-drain junction for a dose rate of 103.8 rad.mn -1 is presented. Temperature annealing effects, at 100°C, are discussed and anal...

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Bibliographic Details
Published in2009 International Conference on Microelectronics - ICM pp. 236 - 239
Main Authors Bendada, E., Malaoui, A., Mabrouki, M., Quotb, K., Rais, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2009
Subjects
Annealing
Degradation
device characterization
Diodes
FETs
Gamma-ray
Ionizing radiation
Microelectronics
MOS devices
MOSFETs
Power MOSFET
structural degradation
Temperature
Threshold voltage
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Summary:An innovative method of device characterization is experimented to qualify annealing Gamma-ray damage in power MOSFETs. The degradation of structural parameters of the body-drain junction for a dose rate of 103.8 rad.mn -1 is presented. Temperature annealing effects, at 100°C, are discussed and analyzed against the evolution of the density trapped oxide and interface charges.
ISBN:9781424458141
1424458145
ISSN:2159-1660
DOI:10.1109/ICM.2009.5418641