High-Power and Broad-Band Quantum Dot SLDs for Optical Coherence Tomography

Quantum dot superluminescent diodes exhibiting 2.5 mW and 125 nm FWHM at 1.27 μm are demonstrated and techniques for realization of broad-band flat-topped emission are discussed. Record high CW power of 42 mW is also demonstrated for narrow-band devices

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Bibliographic Details
Published in2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest pp. 47 - 48
Main Authors Groom, K.M., Ray, S.K., Alexander, R.R., Choi, T., Kennedy, K., Liu, H., Hopkinson, M., Hogg, R.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2006
Subjects
Gallium arsenide
Indium
Light emitting diodes
Optical scattering
Quantum dots
Stimulated emission
Superluminescent diodes
Temperature
Tomography
US Department of Transportation
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Summary:Quantum dot superluminescent diodes exhibiting 2.5 mW and 125 nm FWHM at 1.27 μm are demonstrated and techniques for realization of broad-band flat-topped emission are discussed. Record high CW power of 42 mW is also demonstrated for narrow-band devices
ISBN:0780395603
9780780395602
ISSN:0899-9406
1947-6981
DOI:10.1109/ISLC.2006.1708079