A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band

An image-rejection low-noise amplifier (LNA) based on 0.18-mum SiGe BiCMOS technology was developed in order to create a 24 GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a...

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Bibliographic Details
Published in2009 IEEE Radio Frequency Integrated Circuits Symposium pp. 307 - 310
Main Authors Masuda, T., Shiramizu, N., Nakamura, T., Washio, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2009
Subjects
BiCMOS integrated circuits
Circuit noise
Energy consumption
Feedback circuits
Germanium silicon alloys
image rejection
low noise amplifier
Low-noise amplifiers
notch filter
Power supplies
Radio frequency
Radiofrequency amplifiers
SiGe HBT
Silicon germanium
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Summary:An image-rejection low-noise amplifier (LNA) based on 0.18-mum SiGe BiCMOS technology was developed in order to create a 24 GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a 14-dB gain at an operating frequency of 27.2 GHz and an IRR greater than 50 dB IRR at an image frequency of 21.6 GHz. While its IIP3 is -14 dBm, its power consumption with a 1.2-V power supply is also low, 7.9 mW.
ISBN:9781424433773
1424433770
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2009.5135546