Ultrathin Oxynitride p-MOSFET Recovery Characteristics under NBTI Stress

The impact of stress and recovery condition on the recovery of an ultrathin oxynitride p-MOSFET under negative-bias temperature instability (NBTI) stress was investigated in this paper. The positive SiO 2 bulk trap detrapping and the relaxation of Si/SiO 2 interface state was studied through the sin...

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Published in2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings pp. 1141 - 1143
Main Authors Yandong He, Mingzhen Xu, Changhua Tan
Format Conference Proceeding
LanguageEnglish
Published 01.10.2006
Subjects
Degradation
Helium
Interface states
Microelectronics
MOSFET circuits
Niobium compounds
Stress measurement
Testing
Threshold voltage
Titanium compounds
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Summary:The impact of stress and recovery condition on the recovery of an ultrathin oxynitride p-MOSFET under negative-bias temperature instability (NBTI) stress was investigated in this paper. The positive SiO 2 bulk trap detrapping and the relaxation of Si/SiO 2 interface state was studied through the single point Idlin (drain current) and NFBSILC (near flat-band stress induced leakage current) measurement. The observation of the enhanced relaxation under positive gate bias both in the stress and recovery stages, which play an important role to clarify the existing viewpoint on NBTI recovery characteristics. The different recharging behavior and the substrate voltage dependence reconfirm that the oxide trap relaxation is the major component in NBTI recovery stage
ISBN:9781424401604
1424401607
DOI:10.1109/ICSICT.2006.306056