Thermally grown GeO2 on epitaxial Ge on Si(001) substrate

We show good quality (GeO 2 ) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.

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Bibliographic Details
Published in2013 14th International Conference on Ultimate Integration on Silicon (ULIS) pp. 169 - 172
Main Authors Casteleiro, C., Halpin, J. E., Shah, V. A., Myronov, M., Leadley, D. R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2013
Subjects
Annealing
Epitaxial growth
Germanium oxide
Hafnium
Lead
Logic gates
Oxidation
Performance evaluation
Silicon
Surface passivation
Thermal growth
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Summary:We show good quality (GeO 2 ) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.
ISBN:9781467348003
1467348007
DOI:10.1109/ULIS.2013.6523510