Depth Homogeneity of Porous Silicon Multilayer

Porous silicon (PS) multilayer is not perfectly homogeneous with etch depth by analyzing reflectance spectra of PS multilayer samples. And, the dominant reason for this is decrease of HF concentration with etch depth. The decreasing HF concentration result in increasing porosity. However, as we all...

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Bibliographic Details
Published in2012 Third International Conference on Digital Manufacturing & Automation pp. 301 - 304
Main Authors Liu Rongxia, Lv Changwu, Zhang Hongyan, Jia Zhenhong
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2012
Subjects
Biomedical optical imaging
Current density
Hafnium
homogeneity
Nonhomogeneous media
Optical sensors
PS multilayer
reflectance spectra
Reflectivity
Silicon
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Summary:Porous silicon (PS) multilayer is not perfectly homogeneous with etch depth by analyzing reflectance spectra of PS multilayer samples. And, the dominant reason for this is decrease of HF concentration with etch depth. The decreasing HF concentration result in increasing porosity. However, as we all known, a low etch current density corresponds to a high porosity. For these reasons, we propose a method that a longer break time is introduced during formation of the individual PS layer at the same time etch current density reduced gradually with etch depth. As a result, the experimental reflectance spectra of PS multilayer formed in this way and the simulation result are consistent.
ISBN:9781467322171
1467322172
DOI:10.1109/ICDMA.2012.73