High density 50 kW SiC inverter systems using a JFET based six-pack power module

• Published in: 8th International Conference on Power Electronics - ECCE Asia pp. 764 - 769
• Main Authors: Han, Timothy Junghee, Nagashima, Jim, Sung Joon Kim, Kulkarni, Srikanth, Barlow, Fred
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2011
• Subjects: High Power Inverter; High Temperature; Inverters; JFETs; Logic gates; Power Module; SiC JFET; Silicon carbide; Substrates; Switches; Wires
• ISBN: 9781612849584; 161284958X
• ISSN: 2150-6078
• DOI: 10.1109/ICPE.2011.5944668

Recent progress on Silicon Carbide (SiC) power devices has shown their better power conversion efficiency compared to Silicon power devices due to the significant reduction in both conduction and switching losses. Combined with their high operating junction temperature capability, six-pack SiC power modules have been developed for high reliable and compact power systems. This paper focuses on the development of a high efficiency and high temperature inverter based on fully integrated SiC power modules. The main topic includes the SiC power module design targeting on high temperature operation (T j >;200°C), full three phase inverter design and prototype development, and the inverter evaluation. A liquid cooled SiC inverter prototype with a peak power rating of 50 kW has been developed and demonstrated. When tested at moderate load levels compared to the inverter rating, an efficiency of 98.5% is achieved by the initial prototype, which is higher than most Si inverters..