Simulation of migration effects in PoP
Due to miniaturisation, higher performance and higher integration, the width of conductive lines as well as the diameter of the solder joints decreases; 3-dimensional packaging like "package-on-package" (PoP) is used in compact applications. The density of solder bumps increases, while pit...
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Published in | EuroSimE 2008 - International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems pp. 1 - 7 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.04.2008
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Subjects | |
Online Access | Get full text |
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Summary: | Due to miniaturisation, higher performance and higher integration, the width of conductive lines as well as the diameter of the solder joints decreases; 3-dimensional packaging like "package-on-package" (PoP) is used in compact applications. The density of solder bumps increases, while pitches become finer. This may lead to an increase of the current density in the solder bump. At present for these packages only finite-element-simulations concerning the warpage were carried out. For the characterisation of PoP reliability, the migration behaviour of the bumps as well as the traces in the substrate were investigated by finite element simulations. The purpose of this paper is an investigation of the via fill in, ambient temperature, reference temperature of the stress free state as well as the influence of delamination in the interconnections of the PoPs before degradation out of migration effects occur, to find out possible risk for PoPs with smaller bumps and traces. |
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ISBN: | 1424421276 9781424421275 |
DOI: | 10.1109/ESIME.2008.4525074 |