Synthesis of monolayer MoS2 with seed promoters by chemical vapor deposition at low temperature

In this paper, large area monolayer MoS 2 was prepared with chemical vapor deposition (CVD) utilizing seed promoters, perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA). The process conditions including seed promoter concentration, temperature and the flow rate of carrier gas were optimized, a...

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Bibliographic Details
Published in2015 China Semiconductor Technology International Conference pp. 1 - 3
Main Authors Gu Pinchao, Zhang Kailiang, Feng Yulin, Wang Fang, Miao Yinping, Han Yemei, Cao Rongrong, Zhang Hanxia
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2015
Subjects
Atom optics
Chemicals
Optical imaging
Silicon
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Summary:In this paper, large area monolayer MoS 2 was prepared with chemical vapor deposition (CVD) utilizing seed promoters, perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA). The process conditions including seed promoter concentration, temperature and the flow rate of carrier gas were optimized, and the obtained MoS 2 is characterized by AFM and optical microscopy. The AFM results show that the thickness of MoS 2 is about 0.7nm, which indicates that the MoS 2 is monolayer. It is found that large area of monolayer MoS 2 may be got at relatively low temperature 650°C with low concentration of PTCDA.
ISSN:2158-2297
2158-2297
DOI:10.1109/CSTIC.2015.7153399