Synthesis of monolayer MoS2 with seed promoters by chemical vapor deposition at low temperature
In this paper, large area monolayer MoS 2 was prepared with chemical vapor deposition (CVD) utilizing seed promoters, perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA). The process conditions including seed promoter concentration, temperature and the flow rate of carrier gas were optimized, a...
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Published in | 2015 China Semiconductor Technology International Conference pp. 1 - 3 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.03.2015
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper, large area monolayer MoS 2 was prepared with chemical vapor deposition (CVD) utilizing seed promoters, perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA). The process conditions including seed promoter concentration, temperature and the flow rate of carrier gas were optimized, and the obtained MoS 2 is characterized by AFM and optical microscopy. The AFM results show that the thickness of MoS 2 is about 0.7nm, which indicates that the MoS 2 is monolayer. It is found that large area of monolayer MoS 2 may be got at relatively low temperature 650°C with low concentration of PTCDA. |
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ISSN: | 2158-2297 2158-2297 |
DOI: | 10.1109/CSTIC.2015.7153399 |