Effect of single oxide trap on electrostatic properties in tunneling field effect transistor

An analytical model is developed for the fluctuation of the electrostatic potential induced by a single charge in the gate oxide in tunneling field effect transistor (TFET). The model is applied to get the fluctuation of the electric current induced by a single oxide trap in TFET. The results are pr...

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Bibliographic Details
Published in2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) pp. 796 - 798
Main Authors Si-Tong Bu, Ming-Yue He, Daming Huang, Ming-Fu Li
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2016
Subjects
Lead
Logic gates
Periodic structures
TFETs
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Summary:An analytical model is developed for the fluctuation of the electrostatic potential induced by a single charge in the gate oxide in tunneling field effect transistor (TFET). The model is applied to get the fluctuation of the electric current induced by a single oxide trap in TFET. The results are presented and compared with TCAD simulation.
ISBN:1467397172
9781467397179
DOI:10.1109/ICSICT.2016.7999044