Graded-bandgap quantum-dot lasers and arrays

Novel bandgap-engineered quantum-dot devices are reported: a dual-wavelength laser, a gain-broadened laser/amplifier employing a bandgap-graded cavity, and a multi-wavelength laser array with a 20 nm tuning range at 1280 nm. The devices are realized using a multi-bandgap post-growth intermixing tech...

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Bibliographic Details
Published in2008 20th International Conference on Indium Phosphide and Related Materials pp. 1 - 3
Main Authors Yanson, D.A., Marsh, J.H., McDougall, S.D., Kowalski, O.P., Bryce, A.C., Kim, S.-S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2008
Subjects
Annealing
bandgap engineering
gain broadening
Gallium arsenide
III-V semiconductor materials
intermixing
Laser tuning
multiple wavelength laser arrays
Optical arrays
Optical materials
Photonic band gap
Quantum dot lasers
quantum dots
Semiconductor laser arrays
Temperature distribution
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Summary:Novel bandgap-engineered quantum-dot devices are reported: a dual-wavelength laser, a gain-broadened laser/amplifier employing a bandgap-graded cavity, and a multi-wavelength laser array with a 20 nm tuning range at 1280 nm. The devices are realized using a multi-bandgap post-growth intermixing technique.
ISBN:9781424422586
1424422582
ISSN:1092-8669
DOI:10.1109/ICIPRM.2008.4703032