Study of photoadmittance and admittance of porous silicon layers

In this work, we investigated electrical properties of Al/PS/p-Si structures. Admittance spectroscopy is one of the major semiconductor diagnostic techniques. Frequency, voltage and wavelengths dependencies of admittance will be analyzed in detail. It will be useful for better understanding of funda...

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Bibliographic Details
Published in2011 13th International Conference on Transparent Optical Networks pp. 1 - 3
Main Authors Korcala, A., Lukasiak, Z., Zawadzka, A., Plociennik, P., Bartkiewicz, K., Bala, W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2011
Subjects
Admittance
admittance spectroscopy
Capacitance
Gas detectors
Integrated circuit modeling
photoadmittance
porous silicon
Shape
Silicon
Spectroscopy
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Summary:In this work, we investigated electrical properties of Al/PS/p-Si structures. Admittance spectroscopy is one of the major semiconductor diagnostic techniques. Frequency, voltage and wavelengths dependencies of admittance will be analyzed in detail. It will be useful for better understanding of fundamental electrical properties of porous silicon.
ISBN:1457708817
9781457708817
ISSN:2162-7339
DOI:10.1109/ICTON.2011.5971180