Comparison of Single Event Transients in AlGaN/GaN Schottky-Gate HEMTs Using Four Sources for Charge Injection

The shapes of single-event transients produced by heavy ions, focused pulsed laser-light, and focused pulsed x-rays in an AlGaN/GaN HEMT were compared.

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Bibliographic Details
Published in2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) pp. 1 - 4
Main Authors Khachatrian, A., Roche, N. J-H, Buchner, S., Koehler, A. D., Anderson, T. J., Hobart, K. D., McMorrow, D., LaLumondiere, S. D., Wells, N. P., Tockstein, M. A., Dillingham, E. C., Bonsall, J. P., Karuza, P., Lotshaw, W. T., Moss, S. C., Brewe, D. L., Ferlet-Cavrois, V., Mushitiello, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2017
Subjects
Aluminum gallium nitride
HEMTs
Ions
Logic gates
Photonics
Wide band gap semiconductors
X-rays
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Summary:The shapes of single-event transients produced by heavy ions, focused pulsed laser-light, and focused pulsed x-rays in an AlGaN/GaN HEMT were compared.
ISSN:1609-0438
DOI:10.1109/RADECS.2017.8696147