Scatterometric Porosimetry for porous low-k patterns characterization

Porous low-k dielectrics integration in interconnects is required to keep improving Integrated Circuits performance. However, these materials are highly sensitive to plasma processes and may be damaged during the patterning steps. Characterizing the plasma induced modification is required on pattern...

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Bibliographic Details
Published in2011 IEEE International Interconnect Technology Conference pp. 1 - 3
Main Authors Hurand, R., Bouyssou, R., Darnon, M., Tiphine, C., Licitra, C., El-kodadi, M., Chevolleau, T., David, T., Posseme, N., Besacier, M., Schiavone, P., Bailly, F., Joubert, O., Verove, C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2011
Subjects
Indexes
Optical sensors
Radar measurements
Sensitivity
Solvents
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Summary:Porous low-k dielectrics integration in interconnects is required to keep improving Integrated Circuits performance. However, these materials are highly sensitive to plasma processes and may be damaged during the patterning steps. Characterizing the plasma induced modification is required on patterned structures to develop less damaging plasma processes. Scatterometric Porosimetry (SP) has recently been introduced to characterize the plasma-induced porous low-k modification on patterned structures. By discussing the sensitivity and correlations of the different optimization parameters on a simple dielectric stack, we will show in which manner the SP method is applicable to fundamental studies and to process optimization.
ISBN:9781457705038
1457705036
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2011.5940350