Research of etching a novel MEMS gyroscope sensing pendulum

A novel MEMS gyroscope sensing pendulum was etched with KOH by isothermal magnetic stirrer, and the etching rate relation with temperature and concentration was investigated in the mask of SiO 2 . The results reveal that a rate of etching Si(100), Si(100) to SiO 2 and Si(100) to Si(111) is 4.0 μm/mi...

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Bibliographic Details
Published inThe 2010 IEEE International Conference on Information and Automation pp. 1516 - 1519
Main Authors Yu Liu, Baisheng Sun, Fuxue Zhang, Wei Zhang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2010
Subjects
Anisotropic magnetoresistance
Gyroscopes
KOH
Lithography
Magnetic
Magnetic anisotropy
MEMS
Micromechanical devices
Oxidation
Perpendicular magnetic anisotropy
Silicon
Structural beams
Wet etching
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Summary:A novel MEMS gyroscope sensing pendulum was etched with KOH by isothermal magnetic stirrer, and the etching rate relation with temperature and concentration was investigated in the mask of SiO 2 . The results reveal that a rate of etching Si(100), Si(100) to SiO 2 and Si(100) to Si(111) is 4.0 μm/min, 550:1 and 90:1 respectively, a uniformity etching surface and ideal etching rate are obtained for a concentration of 30%KOH at 110°C, meet the production of MEMS gyroscope requirements.
ISBN:1424457017
9781424457014
DOI:10.1109/ICINFA.2010.5512026