A 0.13-μm HBT divide-by-6 injection-locked frequency divider
The design and analysis of a D-band divide-by-6 injection-locked frequency divider (ILFD) are presented. The circuit employs a microstrip Lange coupler, a microstrip delay line, and a pair of Cascode transistors to form a feedback loop with a center natural frequency of 24GHz to achieve a divide-by-...
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Published in | IEEE Asian Solid-State Circuits Conference 2011 pp. 97 - 100 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.11.2011
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Subjects | |
Online Access | Get full text |
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Summary: | The design and analysis of a D-band divide-by-6 injection-locked frequency divider (ILFD) are presented. The circuit employs a microstrip Lange coupler, a microstrip delay line, and a pair of Cascode transistors to form a feedback loop with a center natural frequency of 24GHz to achieve a divide-by-6 frequency division operation. The proposed ILFD is fabricated in a 0.13μm SiGe HBT technology and occupies a silicon arngea of 0.7×0.9mm 2 . The developed chip shows frequency-division locking range from 135GHz to 150.2GHz with 2dBm input signal while consuming 5.25mW to 14.4mW including the output buffer amplifier. A phase noise of -121.58dBc/Hz at 1MHz offset is achieved at 150.2GHz. |
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ISBN: | 9781457717840 1457717840 |
DOI: | 10.1109/ASSCC.2011.6123613 |