A 0.13-μm HBT divide-by-6 injection-locked frequency divider

The design and analysis of a D-band divide-by-6 injection-locked frequency divider (ILFD) are presented. The circuit employs a microstrip Lange coupler, a microstrip delay line, and a pair of Cascode transistors to form a feedback loop with a center natural frequency of 24GHz to achieve a divide-by-...

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Bibliographic Details
Published inIEEE Asian Solid-State Circuits Conference 2011 pp. 97 - 100
Main Authors Lei Wang, Yong-Zhong Xiong, San-Ming Hu, Teck-Guan Lim
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2011
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Summary:The design and analysis of a D-band divide-by-6 injection-locked frequency divider (ILFD) are presented. The circuit employs a microstrip Lange coupler, a microstrip delay line, and a pair of Cascode transistors to form a feedback loop with a center natural frequency of 24GHz to achieve a divide-by-6 frequency division operation. The proposed ILFD is fabricated in a 0.13μm SiGe HBT technology and occupies a silicon arngea of 0.7×0.9mm 2 . The developed chip shows frequency-division locking range from 135GHz to 150.2GHz with 2dBm input signal while consuming 5.25mW to 14.4mW including the output buffer amplifier. A phase noise of -121.58dBc/Hz at 1MHz offset is achieved at 150.2GHz.
ISBN:9781457717840
1457717840
DOI:10.1109/ASSCC.2011.6123613