Overcoming pHEMT Linearity Dependence on Fundamental Input Tuning by Digital Pre-Distortion

In order to achieve highest possible gain and lowest input reflection coefficient, a conjugate match at the input of power transistors is desired. Unfortunately, as will be shown in this paper, such an input termination is not adequate for best linear performance of pHEMT power transistors operated...

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Bibliographic Details
Published in2007 IEEE/MTT-S International Microwave Symposium pp. 1067 - 1070
Main Authors Bokatius, M., Lefevre, M., Miller, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Error correction
FETs
field effect transistors
Impedance matching
Linearity
microwave amplifiers
MIM capacitors
nonlinear circuits
nonlinearities
Performance gain
PHEMTs
Plastic packaging
Power amplifiers
Power harmonic filters
Power transistors
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Summary:In order to achieve highest possible gain and lowest input reflection coefficient, a conjugate match at the input of power transistors is desired. Unfortunately, as will be shown in this paper, such an input termination is not adequate for best linear performance of pHEMT power transistors operated in class AB. Therefore, these parameters need to be traded off against each other, if the device is used as a stand alone amplification stage. The use of digital pre-distortion allows operation of the transistor at best gain, input return loss, and linearity simultaneously.
ISBN:1424406870
9781424406876
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.380277