Improvement of thermal stability and reduction of Schottky barrier height of Ni germanide utilizing Ni-Pt(1%) alloy on Ge-on-Si substrate

In this study, thermal stability of Ni germanide on Ge-onSi substrate is improved using Ni-Pt(l%) alloy target. It is believed that Pt incorporation suppressed the oxidation of NiGe and Ni and Ge diffusion. The proposed Ni-Pt/TiN is also efficient in reducing hole barrier height between Ni germanide...

Full description

Saved in:
Bibliographic Details
Published in2008 IEEE Silicon Nanoelectronics Workshop pp. 1 - 2
Main Authors Ying-Ying Zhang, Jung-Woo Oh, In-Sik Han, Zhun Zhong, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Won-Ho Choi, Ga-Won Lee, Jin-Suk Wang, Majhi, P., Hsing-Huang Tseng, Hi-Deok Lee
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2008
Subjects
Annealing
MOSFETs
Nickel alloys
Rough surfaces
Schottky barriers
Substrates
Surface roughness
Temperature
Thermal stability
Tin
Online AccessGet full text

Cover

More Information
Summary:In this study, thermal stability of Ni germanide on Ge-onSi substrate is improved using Ni-Pt(l%) alloy target. It is believed that Pt incorporation suppressed the oxidation of NiGe and Ni and Ge diffusion. The proposed Ni-Pt/TiN is also efficient in reducing hole barrier height between Ni germanide and source/drain, i.e., decrease of contact resistance therein. The extracted Schottky barrier height shows decrease of about 20 meV. Therefore, the proposed NiPt alloy could be promising for the high mobility Ge pMOSFET applications.
ISBN:9781424420711
1424420717
ISSN:2161-4636
2161-4644
DOI:10.1109/SNW.2008.5418409