Si Via Interconnection Technique with Thermal Budget Design

The silicon-through-via structure that can withstand high thermal budget of MEMS process is suggested for stacked MEMS package. The doped silicon is used as through- via material instead of metal. The key ideas and design are described in detail. SDB (silicon direct bonding) multi-stacking process a...

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Published in2007 International Conference on Thermal Issues in Emerging Technologies: Theory and Application pp. 159 - 162
Main Authors Jinwoo, Jeong, Eunsung, Lee, Hyeon Cheol, Kim, Changyoul, Moon, Kukjin, Chun
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2007
Subjects
Copper
Micromechanical devices
Nickel
Packaging
Silicon
Stacking
Temperature
Thermal engineering
Thermal stresses
Wafer bonding
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Summary:The silicon-through-via structure that can withstand high thermal budget of MEMS process is suggested for stacked MEMS package. The doped silicon is used as through- via material instead of metal. The key ideas and design are described in detail. SDB (silicon direct bonding) multi-stacking process and metal reflow technique are used for through-via fabrication. Through-via arrays with 40mum and 50mum spacing are fabricated. Resistance of the fabricated via is measured. The thermal characteristics of the silicon through-via are under evaluation
ISBN:1424408962
9781424408962
DOI:10.1109/THETA.2007.363432