Reexamination of Electron Mobility Dependence on Dopants in GaAs

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Bibliographic Details
Published in27th European Solid-State Device Research Conference pp. 304 - 307
Main Authors Kopf, Ch, Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.
Format Conference Proceeding
LanguageEnglish
Published Editions Frontieres 1997
Subjects
Charge carrier processes
Electron mobility
Fourier transforms
Gallium arsenide
Impurities
Ionization
Microelectronics
Monte Carlo methods
Scattering
Semiconductor process modeling
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ISBN:2863322214
9782863322215
DOI:10.1109/ESSDERC.1997.194426