Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests

• Published in: 2012 International Conference on Indium Phosphide and Related Materials pp. 208 - 211
• Main Authors: Kone, G. A., Maneux, C., Labat, N., Zimmer, T., Grandchamp, B., Frijlink, P., Maher, H.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.08.2012
• Subjects: Accelerated aging; accelerated aging tests; Degradation; DHBTS; GaAsSb; Indium phosphide; InP; Junctions; life tests; reliability; Semiconductors; Stress; Temperature; type II heterojunction
• ISBN: 9781467317252; 146731725X
• ISSN: 1092-8669
• DOI: 10.1109/ICIPRM.2012.6403359

We report on the reliability of InP/GaAsSb/InP DHBTs dedicated to very high-speed ICs applications. The devices under tests were fabricated by OMMIC [1]. Accelerated aging tests under thermal stress were previously performed on the same technology and the results are detailed in [2]. In this paper, we present the accelerated aging tests under bias stress performed on 15 DHBTs up to 2000 hours. The collector current density was fixed at 400 kA/cm 2 with various collector-emitter voltages V CE (from 1.5 V to 2 V) and various base plate temperature T a (from 30°C to 120°C). The associated junction temperature range is 80-180°C. From the Gummel characteristic, we observe that the major degradation mechanism is the base current decrease for V BE <; 0.8 V. The failure mechanism leading to the base current I B decrease was analysed by physical simulation using TCAD. The degradation mechanism leading to the gradual decrease of the base current is linked to the emitter sidewall trap density decrease. To correctly simulate the base current during aging tests, a unique donor trap level at E T -E V = 1.15 eV were modified. The traps density evolution suggests a surface state improvement. Associated activation energy E a of 0.63 eV has been extracted.