Hot hole induced damage in 1T-FBRAM on bulk FinFET

The reliability of a one Transistor Floating Body Random Access Memory (1T-FBRAM) bulk FinFET cell using Bipolar Junction Transistor (BJT) programming is investigated. It is shown that hot holes generated by impact ionization create interface defects close to the drain and positively charged oxide t...

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Bibliographic Details
Published in2011 International Reliability Physics Symposium pp. 2D.3.1 - 2D.3.6
Main Authors Aoulaiche, M, Collaert, N, Mercha, A, Rakowski, M, De Wachter, B, Groeseneken, G, Altimime, L, Jurczak, M, Lu, Z
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2011
Subjects
BJT
Current measurement
cycling
Degradation
endurance
FinFET
Floating body cell
Hot carriers
Impact ionization
Logic gates
Programming
RAM
Stress
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Summary:The reliability of a one Transistor Floating Body Random Access Memory (1T-FBRAM) bulk FinFET cell using Bipolar Junction Transistor (BJT) programming is investigated. It is shown that hot holes generated by impact ionization create interface defects close to the drain and positively charged oxide traps, especially at high transverse electric field. These created defects degrade the cell endurance. Moreover, this degradation is enhanced for shorter channel devices and narrower fin widths, which would be a limitation for the scaling of floating body RAM.
ISBN:1424491134
9781424491131
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2011.5784459