Wigner Monte Carlo Simulation of CNTFET: Comparison Between Semi-Classical and Quantum Transport

This paper examines the quantum transport effects in carbon nanotube field-effect transistors (CNTFETs) within the Wigner's function formalism, using a particle Monte Carlo technique. The comparison with semi-classical simulation shows that significant differences observed at the microscopic le...

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Bibliographic Details
Published in2009 13th International Workshop on Computational Electronics pp. 1 - 4
Main Authors Huu-Nha Nguyen, Querlioz, Damien, Galdin-Retailleau, Sylvie, Bournel, Arnaud, Dollfus, Philippe
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
Subjects
Boltzmann equation
Carbon nanotubes
CNTFETs
FETs
Microscopy
Monte Carlo methods
MOSFETs
Particle scattering
Poisson equations
Tunneling
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Summary:This paper examines the quantum transport effects in carbon nanotube field-effect transistors (CNTFETs) within the Wigner's function formalism, using a particle Monte Carlo technique. The comparison with semi-classical simulation shows that significant differences observed at the microscopic level are not necessarily strongly reflected at the macroscopic level in terms of drain current. The dependence of quantum effects on gate length is also investigated.
ISBN:1424439256
9781424439256
DOI:10.1109/IWCE.2009.5091161