Internal Field Analysis of High-Power Microwave in Impurities Semiconductor Materials

Caused the particularity of dielectric properties, Electromagnetic wave has their different transmit characteristics in impure semiconductor materials. Consider the high power microwave direct irradiation and transmission on semiconductor material, the law of electromagnetic waves disseminated in la...

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Bibliographic Details
Published in2009 5th International Conference on Wireless Communications, Networking and Mobile Computing pp. 1 - 4
Main Authors Guo, Jierong, Cai, Xinhua, Wang, Xianchun
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2009
Subjects
Dielectric substrates
Electromagnetic fields
Electromagnetic scattering
Frequency
Microwave technology
Optical reflection
Optical surface waves
Semiconductor impurities
Semiconductor materials
Surface waves
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Summary:Caused the particularity of dielectric properties, Electromagnetic wave has their different transmit characteristics in impure semiconductor materials. Consider the high power microwave direct irradiation and transmission on semiconductor material, the law of electromagnetic waves disseminated in layered media is studied, and different substrates (usually medium and ideal conductor) are discussed separately. The treatment methods of doping concentration used in the simulation of semiconductor devices and transmission coefficient of the reflected theoretical formula of the different levels are calculated.
ISBN:9781424436927
1424436923
1424436915
9781424436910
ISSN:2161-9646
DOI:10.1109/WICOM.2009.5302153