HCI vs. BTI? - Neither one's out

In the development of MOSFETs first `Hot Carrier Injection' (HCI) played an important role for reliability aspects [1,2]. With new shrinked process generations and nitrided gate oxides additionally the `Bias Temperature Instability' (BTI) raised and became the most critical mechanism. Some...

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Bibliographic Details
Published in2012 IEEE International Reliability Physics Symposium (IRPS) pp. 2F.4.1 - 2F.4.6
Main Authors Schlunder, C., Aresu, S., Georgakos, G., Kanert, W., Reisinger, H., Hofmann, K., Gustin, W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2012
Subjects
Degradation
Hot carriers
Human computer interaction
Logic gates
MOSFETs
Reliability
Stress
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Summary:In the development of MOSFETs first `Hot Carrier Injection' (HCI) played an important role for reliability aspects [1,2]. With new shrinked process generations and nitrided gate oxides additionally the `Bias Temperature Instability' (BTI) raised and became the most critical mechanism. Some publications even claim that HCI is negligible in main-stream applications [3-6]. But is this statement generally true or is it the result of a partial view? This paper will discuss the area of conflict regarding the importance of N/PBTI and HCI. Some typical examples will illuminate different fields of applications with one dominating damage mechanism. Specific characteristics of these circuits and operation conditions leading to an outbalance of HCI or Negative-/Positive-BTI will be carved out. Finally it will be evaluated if a general trend is observable.
ISBN:145771678X
9781457716782
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2012.6241797