Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots

We report on isolated dot spectroscopy of polar (211)InAs/GaAs quantum dots grown by MBE. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.

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Bibliographic Details
Published in2007 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Dialynas, G.E., Xenogianni, C., Trichas, E., Savvidis, P.G., Constantinidis, G., Hatzopoulos, Z., Pelekanos, N.T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2007
Subjects
Apertures
Atom optics
Atomic force microscopy
Chromium
Excitons
Gallium arsenide
Molecular beam epitaxial growth
Quantum dots
Scanning electron microscopy
Spectroscopy
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Summary:We report on isolated dot spectroscopy of polar (211)InAs/GaAs quantum dots grown by MBE. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.
ISSN:2160-9004
DOI:10.1109/CLEO.2007.4453514