The structured potential in the vacuum gap between two closely spaced semiconductors (dielectrics)

• Published in: 2005 International Vacuum Nanoelectronics Conference pp. 200 - 201
• Main Authors: Il'chenko, L.G., Chuiko, A.A., Lobanov, V.V., Il'chenko, V.V.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2005
• Subjects: Chemistry; Current-voltage characteristics; Dielectrics; Green's function methods; Lattices; Microelectronics; Microscopy; Microstructure; Poisson equations; Vacuum systems
• ISBN: 9780780393844; 0780393848
• ISSN: 2164-2370
• DOI: 10.1109/IVNC.2005.1619555

The structured component DeltaV st (roarr) of the full potential formed between two dielectrics (semiconductors) in a small vacuum interval is calculated theoretically. The analytical expressions for DeltaV st (roarr) in the vacuum gap is calculated, using the Green's functions of the nonlocal Poisson equation. It is shown that the structured component DeltaV st (roarr) in the case of the small separated interval L~0.3-2 nm determines the lateral changing of the potential barrier height in the vacuum gap, which can result in the origin of the ordered long-period lattice of the areas of the decrease (increase) of the full potential inside a vacuum interspace. This fact can lead to the origin of the cold field emission canals, which are stimulated by the microscopic structure of the anode surface. If the cathode-anode vacuum distance is increasing (L4rarrinfin) the origin of the emission centers at the cathode surface is connected only with the microscopic structure of its surface