Highly reliable guardring-free InAlAs avalanche photodiodes

The InAlAs avalanche photodiodes that employ a guardring-free structure demonstrate record high reliability of over 10000 hours at a high temperature of 200degC with no degradation in the surfaced pn-junction.

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Bibliographic Details
Published inLEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society pp. 155 - 156
Main Authors Ishimura, E., Yagyu, E., Nakaji, M., Ihara, S., Itamoto, H., Yoshiara, K., Aoyagi, T., Ishikawa, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2008
Subjects
Avalanche photodiodes
Dark current
Degradation
Distributed Bragg reflectors
Frequency
Indium compounds
Indium gallium arsenide
Indium phosphide
Temperature
Testing
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Summary:The InAlAs avalanche photodiodes that employ a guardring-free structure demonstrate record high reliability of over 10000 hours at a high temperature of 200degC with no degradation in the surfaced pn-junction.
ISBN:9781424419319
142441931X
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2008.4688535