Evaluation of on-state voltage VCE(ON) and threshold voltage Vth for real-time health monitoring of IGBT power modules

This paper investigates by experiment and simulation the use of the real-time measurements of on-state voltage V CE(ON) and threshold voltage V th for real-time health monitoring of IGBT power modules. A study of the dependencies of each parameter on temperature, wear-out mechanisms and operating co...

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Bibliographic Details
Published in2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) pp. 1 - 10
Main Authors Eleffendi, Mohd Amir, Johnson, C. Mark
Format Conference Proceeding
LanguageEnglish
Published Jointly owned by EPE Association and IEEE PELS 01.09.2015
Subjects
Condition Monitoring
Current measurement
Estimation Technique
IGBT
Insulated gate bipolar transistors
Junction Temperature
Measurement
Monitoring
Reliability
Temperature
Temperature measurement
Thermo-Sensitive Electrical Parameters
Threshold voltage
Voltage measurement
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Summary:This paper investigates by experiment and simulation the use of the real-time measurements of on-state voltage V CE(ON) and threshold voltage V th for real-time health monitoring of IGBT power modules. A study of the dependencies of each parameter on temperature, wear-out mechanisms and operating conditions is presented. Online measurement circuits are developed to obtain these two parameters during the normal operation of power converters. Junction temperature estimation for health monitoring is implemented using V th which is a thermo-sensitive electrical parameter. The data of V CE(ON) , V th and T J are combined in a residual-based health monitoring framework which allows the discrimination between two dominant failure mechanisms of power modules: wire-bond lift-off and solder fatigue.
DOI:10.1109/EPE.2015.7309265