Catalyst free low temperature direct growth of carbon nanotubes

A metal catalyst free direct growth process has been developed for the CVD of carbon nanotubes (CNTs) on carbon implanted SiGe islands or Ge dots on Si substrates. From TEM and Raman measurements, the fabricated CNTs are identified as single-walled CNTs (SWNTs) with diameter ranging from 1.2 to 2.1...

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Bibliographic Details
Published in5th IEEE Conference on Nanotechnology, 2005 pp. 649 - 652 vol. 2
Main Authors Uchino, T., Bourdakos, K.N., de Groot, C.H., Ashburn, P., Wang, S., Kiziroglou, M.E., Dilliway, G.D., Smith, D.C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Carbon nanotubes
Chemical processes
Chemical vapor deposition
Germanium silicon alloys
Ion implantation
Oxidation
Silicon carbide
Silicon germanium
Temperature
Very large scale integration
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Summary:A metal catalyst free direct growth process has been developed for the CVD of carbon nanotubes (CNTs) on carbon implanted SiGe islands or Ge dots on Si substrates. From TEM and Raman measurements, the fabricated CNTs are identified as single-walled CNTs (SWNTs) with diameter ranging from 1.2 to 2.1 nm. Essential parts of the substrate preparation after SiGe or Ge dot growth and carbon ion implantation are a chemical oxidation and preheating at 1000/spl deg/C prior to CNT growth. We believe that the lower melting point of Ge and oxidation enhanced surface decomposition assist the formation of carbon clusters.
ISBN:0780391993
9780780391994
ISSN:1944-9399
1944-9380
DOI:10.1109/NANO.2005.1500853