Sputtering (103) Oriented AlN and its SAW Properties Analysis

In this research, the (103) oriented AIN films were successfully sputtered on silicon to be a new composite surface acoustic wave (SAW) substrate. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the Full-Width Half-Maximum (FWHM) value of t...

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Bibliographic Details
Published in2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics pp. 774 - 776
Main Authors Zhi-Xun Lin, Sean Wu, Ro, R., Maw-Shung Lee
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2007
Subjects
Acoustic diffraction
Acoustic waves
Crystallization
Semiconductor films
Silicon
Sputtering
Surface acoustic wave devices
Surface acoustic waves
X-ray diffraction
X-ray scattering
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Summary:In this research, the (103) oriented AIN films were successfully sputtered on silicon to be a new composite surface acoustic wave (SAW) substrate. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the Full-Width Half-Maximum (FWHM) value of the (103) XRD peak was 0.288deg. The SAW properties of the (103) oriented AIN films on silicon had been theoretically analyzed. The simulation results showed the maximum Rayleigh velocity was about 5626 m/s and the maximum electromechanical coupling constant (K) was about 0.61%. It was found those SAW parameters of the (103)AlN/Si structure surpassed the ones of the (002)AlN/Si structure. The (103) oriented AIN films on silicon is a promising candidate applicable for the design of SAW devices.
ISBN:1424413338
9781424413331
ISSN:1099-4734
2375-0448
DOI:10.1109/ISAF.2007.4393398