Low power multi-context look-up table (LUT) using spin-torque transfer magnetic RAM for non-volatile FPGA

The conventional magnetic RAM (MRAM) LUTs for non-volatile field programmable gate arrays (FPGA) have excellent overall power characteristics for read and static modes but sufficient reliability of data operation has not been met due to the large process variations in the cell process technology. Th...

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Bibliographic Details
Published in2017 International SoC Design Conference (ISOCC) pp. 107 - 108
Main Authors Cho, Kyungseon, Lee, Seungjin, Lee, Choongkeun, Yim, Taegun, Yoon, Hongil
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2017
Subjects
Field programmable gate arrays
look-up table
Magnetic tunneling
Non-volatile FPGA
Nonvolatile memory
Power demand
Random access memory
Reliability
STT-MRAM
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Summary:The conventional magnetic RAM (MRAM) LUTs for non-volatile field programmable gate arrays (FPGA) have excellent overall power characteristics for read and static modes but sufficient reliability of data operation has not been met due to the large process variations in the cell process technology. The novel MRAM LUT proposed in this paper can serve to enhance the reliability, reduce the power significantly and reduce implementation size by structuring multi-context in a single MRAM LUT. In an efficient manner, based on the output transition rate of 15%, the proposed 6-input MRAM LUT with 8-context shows 49.6% smaller power consumption and 18.1% smaller area compared to those of the 8 6-input SRAM LUTs.
DOI:10.1109/ISOCC.2017.8368792