Self-Amorphizing Gas Cluster Ion Beam Technology and Combination with Laser Spike Anneal for Highly Scaled Source Drain Junction
High energy borane (B 2 H 6 ) gas cluster ion beam (GCIB) successfully enables a sub-10 nm box-shaped dopant profile without channeling tail, and steep gradient (2.5 nm/dec) in lateral direction. pFET using GCIB source/drain extension shows superior suppression of short channel effects and reduces t...
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Published in | 2006 International Workshop on Junction Technology pp. 44 - 47 |
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Main Authors | , , , , , , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2006
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Subjects | |
Online Access | Get full text |
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Summary: | High energy borane (B 2 H 6 ) gas cluster ion beam (GCIB) successfully enables a sub-10 nm box-shaped dopant profile without channeling tail, and steep gradient (2.5 nm/dec) in lateral direction. pFET using GCIB source/drain extension shows superior suppression of short channel effects and reduces the dependency of drive current on gate overlap capacitance variation for scaled devices. Moreover, the perimeter leakage component in p+/n-well junction was reduced compared to the conventional co-implantation process with pre-amorphization, which might come from novel self-amorphization mechanism by energized clusters without foreign impurities such as Ge and F. For further scaled devices, GCIB can provide more efficient boron activation by laser spike annealing (LSA) while maintaining the scaled extension profile by combination with the reduced temperature spike RTA |
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ISBN: | 9781424400478 1424400473 |
DOI: | 10.1109/IWJT.2006.220857 |