Scaling technologies for millimeter-wave GaN-HEMTs

GaN-HEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for GaN-HEMTs and the correct topology derived such that simple scaling rules apply to the unit cell....

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Bibliographic Details
Published in2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications pp. 1 - 3
Main Authors Yongsheng Dai, Jianjun Zhou, Jianfeng Chen, Min Han
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2012
Subjects
Fingers
Gallium nitride
HEMTs
Integrated circuit modeling
Logic gates
Scattering parameters
Topology
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Summary:GaN-HEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for GaN-HEMTs and the correct topology derived such that simple scaling rules apply to the unit cell. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fngers and the gate width are derived to optimize the size of the device.
ISBN:9781467309011
146730901X
DOI:10.1109/IMWS2.2012.6338180