Intraband InAs/InAlGaAs/InP Quantum Dot Detectors for the MIR

In this work, the authors presented the results of a detailed optical characterization of specially designed stacked self-assembled InAs/InGaAlAs/InGaAs/InP QDIP structures grown by metalorganic vapor phase epitaxy. The QDIP active region consists of an InGaAs quantum well grown on InGaAlAs followed...

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Bibliographic Details
Published in2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference p. 1
Main Authors Gebhard, T., Souza, P. L., Pires, M. P., Lopes, A. J., Parz, W., Unterrainer, K., Villas-Boas, J. M., Studart, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Indium gallium arsenide
Indium phosphide
Infrared detectors
Lattices
Optical polarization
Photoconductivity
Photodetectors
Quantum dots
Quantum mechanics
Temperature
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Summary:In this work, the authors presented the results of a detailed optical characterization of specially designed stacked self-assembled InAs/InGaAlAs/InGaAs/InP QDIP structures grown by metalorganic vapor phase epitaxy. The QDIP active region consists of an InGaAs quantum well grown on InGaAlAs followed by a thin InGaAlAs layer on top of which the dots are nucleated. The ternary and the quaternary material are lattice matched to InP. The dots are then covered by a thin InP barrier which helps reducing the dark current and is more convenient to be grown at the same temperature as the dots themselves.
ISBN:9781424409303
1424409306
DOI:10.1109/CLEOE-IQEC.2007.4387030