Observation of three-level random telegraph noise in GIDL current of Saddle-Fin type DRAM cell transistor

Multi level RTNs have been measured in GIDL current of DRAM cell transistor. Three-level RTN which has not been reported in GIDL current was observed. We found that this RTN has unique characteristics which could be distinguished from two-level RTN by single trap and four-level RTN due to two traps....

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Bibliographic Details
Published in2010 IEEE International Memory Workshop pp. 1 - 2
Main Authors Byoungchan Oh, Heung-Jae Cho, Heesang Kim, Hyungcheol Shin
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
Subjects
Current measurement
Electric variables measurement
Electron traps
Leakage current
Noise level
Noise measurement
Random access memory
Semiconductor device noise
Telegraphy
Voltage
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Summary:Multi level RTNs have been measured in GIDL current of DRAM cell transistor. Three-level RTN which has not been reported in GIDL current was observed. We found that this RTN has unique characteristics which could be distinguished from two-level RTN by single trap and four-level RTN due to two traps. Also, we discussed bias dependency of time constants of the three-level RTN.
ISBN:9781424467198
1424467195
ISSN:2159-483X
DOI:10.1109/IMW.2010.5488406