Observation of three-level random telegraph noise in GIDL current of Saddle-Fin type DRAM cell transistor
Multi level RTNs have been measured in GIDL current of DRAM cell transistor. Three-level RTN which has not been reported in GIDL current was observed. We found that this RTN has unique characteristics which could be distinguished from two-level RTN by single trap and four-level RTN due to two traps....
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Published in | 2010 IEEE International Memory Workshop pp. 1 - 2 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2010
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Subjects | |
Online Access | Get full text |
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Summary: | Multi level RTNs have been measured in GIDL current of DRAM cell transistor. Three-level RTN which has not been reported in GIDL current was observed. We found that this RTN has unique characteristics which could be distinguished from two-level RTN by single trap and four-level RTN due to two traps. Also, we discussed bias dependency of time constants of the three-level RTN. |
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ISBN: | 9781424467198 1424467195 |
ISSN: | 2159-483X |
DOI: | 10.1109/IMW.2010.5488406 |