Improved electron-beam lithography with C60 fullerene for InP membrane waveguides

We present a method to prepare a mixed resist material composed of a positive electron-beam resist (ZEP520A) and C 60 fullerene. The method is modified from previous methods in literatures to achieve an optimized mixing. An improvement of the mixed material on the thermal resistance respect to the s...

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Bibliographic Details
Published in26th International Conference on Indium Phosphide and Related Materials (IPRM) pp. 1 - 2
Main Authors Yuqing Jiao, Pello, Josselin, Longfei Shen, Smalbrugge, Barry, Smit, Meint, van der Tol, Jos
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2014
Subjects
Couplings
Indium phosphide
Loss measurement
Optical waveguides
Propagation losses
Resists
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Summary:We present a method to prepare a mixed resist material composed of a positive electron-beam resist (ZEP520A) and C 60 fullerene. The method is modified from previous methods in literatures to achieve an optimized mixing. An improvement of the mixed material on the thermal resistance respect to the same structures fabricated with normal ZEP resist has been demonstrated by fabricating multimode interference couplers and coupling regions of micro-ring resonators. An improvement on the propagation loss of the InP membrane waveguides from 6.6 to 3.3 dB/cm using this mixed material is also shown.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2014.6880546