Low LO Power V-band CPW Mixer Using GaAs PHEMT

We have designed and fabricated a low LO power V-band CPW mixer using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, an...

Full description

Saved in:
Bibliographic Details
Published in2002 32nd European Microwave Conference pp. 1 - 4
Main Authors An, Dan, Lee, Bok Hyung, Chae, Yeon Sik, Park, Hyung Moo, Park, Hyun Chang, Rhee, Jin Koo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2002
Subjects
Coplanar waveguides
Gain
Gallium arsenide
Isolation technology
Millimeter wave communication
Millimeter wave technology
MIMICs
PHEMTs
Power transmission lines
Wireless communication
Online AccessGet full text

Cover

More Information
Summary:We have designed and fabricated a low LO power V-band CPW mixer using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The V-band mixer was fabricated using the MIMIC process including 0.1-? GaAs PHEMTs and CPW transmission lines. The V-band mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. The low LO power and the high conversion gain achieved in this work is among the best ever reported for a V-band mixer.
DOI:10.1109/EUMA.2002.339399