The effect of interfacial oxide and high-κ thickness on NMOS Vth shift from plasma-induced damage

Different thicknesses of interfacial oxide and high-κ were used to study the effects of plasma-induced damage (PID) in NMOS transistors. The thickness of high-κ HfO 2 was varied from 15Å to 25Å. The thickness of the interfacial layer (IL) with N 2 O/H 2 was also varied from 5Å to 10Å. The threshold...

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Bibliographic Details
Published in2014 Silicon Nanoelectronics Workshop (SNW) pp. 1 - 2
Main Authors Chih-Yang Chang, Jie Zhou, Chi-Nung Ni, Chan, Osbert, Shiyu Sun, Suen, Wesley, Mings, Sherry, Bevan, Malcolm, Liu, Patricia M., Hsieh, Peter, Chorng-Ping Chang, Hung, Raymond
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Antennas
Dielectrics
Hafnium compounds
Logic gates
MOSFET
Plasmas
Reliability
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Summary:Different thicknesses of interfacial oxide and high-κ were used to study the effects of plasma-induced damage (PID) in NMOS transistors. The thickness of high-κ HfO 2 was varied from 15Å to 25Å. The thickness of the interfacial layer (IL) with N 2 O/H 2 was also varied from 5Å to 10Å. The threshold voltage (V th ) shift was observed to be greater in the thinner oxide using the same plasma condition. There was no significant effect with different IL thickness between 5Å and 10Å.
ISBN:9781479956760
1479956767
DOI:10.1109/SNW.2014.7348568