Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability

Segmented-channel Si 1-x Ge x /Si pMOSFETs are fabricated using a conventional process, starting with a corrugated Si 1-x Ge x /Si substrate. As compared with control devices fabricated using the same process but starting with a non-corrugated Si 1-x Ge x /Si substrate, the segmented-channel MOSFETs...

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Bibliographic Details
Published in2012 Symposium on VLSI Technology (VLSIT) pp. 167 - 168
Main Authors Ho, B., Nuo Xu, Bingxi Wood, Tran, V., Chopra, S., Yihwan Kim, Bich-Yen Nguyen, Bonnin, O., Mazure, C., Kuppurao, S., Chorng-Ping Chang, Liu, Tsu-Jae King
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2012
Subjects
Fabrication
Layout
Logic gates
MOSFET circuits
MOSFETs
Silicon
Substrates
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Summary:Segmented-channel Si 1-x Ge x /Si pMOSFETs are fabricated using a conventional process, starting with a corrugated Si 1-x Ge x /Si substrate. As compared with control devices fabricated using the same process but starting with a non-corrugated Si 1-x Ge x /Si substrate, the segmented-channel MOSFETs show better layout efficiency (30% higher I ON for I OFF =10 nA per μm layout width) due to enhanced hole mobility, and dramatically reduced dependence of performance on layout width due to the geometrical regularity of the channel region.
ISBN:9781467308465
1467308463
ISSN:0743-1562
DOI:10.1109/VLSIT.2012.6242514