THz integrated circuits using InP HEMT transistors

Over the last few years, operating frequencies of InP HEMT Transistors have pushed above 100 GHz (1 THz). This has allowed electronic circuitry to be realized at frequencies as high as 670 GHz. In particular, Low Noise Amplifiers (LNA), Power Amplifiers (PA), mixers and multipliers have all been imp...

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Bibliographic Details
Published in2012 International Conference on Indium Phosphide and Related Materials pp. 1 - 4
Main Authors Leong, K., Mei, G., Radisic, V., Sarkozy, S., Deal, W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2012
Subjects
Gain
HEMTs
Indium phosphide
Low Noise Amplifier
Noise
Noise figure
Power Amplifier
Receivers
Terahertz
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Summary:Over the last few years, operating frequencies of InP HEMT Transistors have pushed above 100 GHz (1 THz). This has allowed electronic circuitry to be realized at frequencies as high as 670 GHz. In particular, Low Noise Amplifiers (LNA), Power Amplifiers (PA), mixers and multipliers have all been implemented. A result of this has been integrated circuit receivers and transmitters operating to frequencies as high as 670 GHz.
ISBN:9781467317252
146731725X
ISSN:1092-8669
DOI:10.1109/ICIPRM.2012.6403302