High performance 0.18 um nMOSFET by TED suppression

• Published in: ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) pp. 140 - 142
• Main Authors: Hyun-Sik Kim, Jong-Hyon Ahn, Duk-Min Lee, Soo-Cheol Lee, Kwang-Pyuk Suh
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1999
• Subjects: Boron; Doping profiles; Fluctuations; Implants; Impurities; MOSFET circuits; Rapid thermal annealing; Rapid thermal processing; Silicon; Threshold voltage

In deep sub-quarter micron, Transient Enhanced Diffusion (TED) of gate channel (Lgate) region seriously gives rise to the variation of device characteristics due to the increase of interstitial silicon atoms. Channel impurity variation by this TED becomes more dominant factor to bring about the seve...