High performance 0.18 um nMOSFET by TED suppression

In deep sub-quarter micron, Transient Enhanced Diffusion (TED) of gate channel (Lgate) region seriously gives rise to the variation of device characteristics due to the increase of interstitial silicon atoms. Channel impurity variation by this TED becomes more dominant factor to bring about the seve...

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Published inICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) pp. 140 - 142
Main Authors Hyun-Sik Kim, Jong-Hyon Ahn, Duk-Min Lee, Soo-Cheol Lee, Kwang-Pyuk Suh
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Boron
Doping profiles
Fluctuations
Implants
Impurities
MOSFET circuits
Rapid thermal annealing
Rapid thermal processing
Silicon
Threshold voltage
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Summary:In deep sub-quarter micron, Transient Enhanced Diffusion (TED) of gate channel (Lgate) region seriously gives rise to the variation of device characteristics due to the increase of interstitial silicon atoms. Channel impurity variation by this TED becomes more dominant factor to bring about the severe fluctuation of threshold voltage than the gate length or the gate oxide thickness variation does. This work presents the results of suppressing Reverse Short Channel Effect (RSCE) which severely is showed in the selectively implanted channel process using local implant process. In case of using boron as the n-channel dopant, the 10% improvement of RSCE and the 35% reduction of Vth fluctuation are achieved through TED suppression by Rapid Thermal Anneal (RTA) treatment. We not only demonstrated the 15% increase of current drive but also removed RSCE clearly by realizing of Super-Steep Retrograded (SSR) channel doping profile with indium.
ISBN:9780780357273
0780357272
DOI:10.1109/ICVC.1999.820851